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HEXFET Power MOSFET
PD - 91352B
IRF530NS
IRF530NL
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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
G
D
S
V DSS = 100V
R DS(on) = 90m ?
I D = 17A
Description
Advanced HEXFET ? Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D 2 Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the
lowest possible on-resistance in any existing surface mount package. The
D 2 Pak is suitable for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF530NL) is available for low-profile applications.
Absolute Maximum Ratings
Parameter
D 2 Pak
IRF530NS
Max.
TO-262
IRF530NL
Units
I D @ T C = 25°C
I D @ T C = 100°C
I DM
P D @T A = 25°C
P D @T C = 25°C
V GS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V ?
Continuous Drain Current, V GS @ 10V ?
Pulsed Drain Current ??
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
17
12
60
3.8
70
0.47
± 20
9.0
7.0
7.4
A
W
W
W/°C
V
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady-state)**
–––
–––
2.15
40
°C/W
www.irf.com
1
09/04/02
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相关代理商/技术参数
IRF530NLHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-262
IRF530NLPBF 制造商:International Rectifier 功能描述:MOSFET, 100V, 17A, 90 MOHM, 24.7 NC QG, TO-262 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-262 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 17A 3PIN TO-262 - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N-CH 100V 17A TO-262
IRF530NLPBF 制造商:International Rectifier 功能描述:MOSFET
IRF530NPBF 功能描述:MOSFET MOSFT 100V 17A 90mOhm 24.7nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF530NS 功能描述:MOSFET N-CH 100V 17A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IRF530NSHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) D2PAK
IRF530NSPBF 功能描述:MOSFET 100V 1 N-CH HEXFET 90mOhms 24.7nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF530NSTRL 制造商:International Rectifier 功能描述: